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  SSM6N05FU high speed switching applications  small package  low on resistance : r on = 0.8 ? (max) (@v gs = 4 v) : r on = 1 .2 ? (max) (@v gs = 2.5 v)  low gate threshold voltage maximum ratings (ta     25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss  12 v dc i d 400 drain current pulse i dp 800 ma drain power dissipation (ta  25c) p d (note1) 300 mw channel temperature t ch 150 c storage temperature range t stg  55~150 c note1: total rating, mounted on fr4 board (25.4 mm  25.4 mm  1.6 t, cu pad: 0.32 mm 2  6) handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm weight: 6.8 mg (typ.) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
marking equivalent circuit (top view) electrical characteristics (ta     25c) (q1, q2 common) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs   12 v, v ds  0    1  a drain-source breakdown voltage v (br) dss i d  1 ma, v gs  0 20   v  drain cut-off current i dss v ds  20 v, v gs  0   1  a gate threshold voltage v th v ds  3 v, i d  0.1 ma 0.6  1.1 v  forward transfer admittance  y fs  v ds  3 v, i d  200 ma (note2) 350   ms i d  200 ma, v gs  4 v (note2)  0.6 0.8 drain-source on resistance r ds (on) i d  200 ma, v gs  2.5 v (note2)  0.85 1.2  input capacitance c iss  22  pf reverse transfer capacitance c rss  9  pf output capacitance c oss v ds  3 v, v gs  0, f  1 mhz   21  pf turn-on time t on  60  switching time turn-off time t off v dd  3 v, i d  100 ma, v gs  0~2.5 v  70  ns note2: pulse test switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d  1 00  a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off)  v th  v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of 2.5 v or higher to turn on this product. (c) v out v dd  3 v duty   1% v in : t r , t f 5 ns (z out  50  ) common source ta  25c v dd out in 2.5 v 0 10  s 50  r l (b) v in t on 90% 10% 0 v 2.5 v 10% 90% t off t r t f v dd v ds ( on ) (a) test circuit d f 6 5 4 1 2 3 q1 q2 654 123 SSM6N05FU product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com


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